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PDF IRF7807VD2PbF Data sheet ( Hoja de datos )
| Número de pieza | IRF7807VD2PbF | |
| Descripción | MOSFET / SCHOTTKY DIODE | |
| Fabricantes | International Rectifier | |
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PD-95291
IRF7807VD2PbF
FETKY MOSFET / SCHOTTKY DIODE
• Co-Pack N-channel HEXFET® Power MOSFET
and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC
A/S 1
8 K/D
Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
A/S 2
A/S 3
7 K/D
6 K/D
• Low Vf Schottky Rectifier
• Lead-Free
G4
5 K/D
D
Description
SO-8
Top View
The FETKY™ family of Co-Pack HEXFET®MOSFETs and
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve
DEVICE CHARACTERISTICS
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO-
RDS(on)
Q
G
Qsw
Qoss
IRF7807VD2
17mΩ
9.5nC
3.4nC
12nC
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
25°C
Current (VGS ≥ 4.5V)
Pulsed Drain Current
70°C
Power Dissipation
25°C
70°C
Schottky and Body Diode
25°C
Average ForwardCurrent
70°C
Junction & Storage Temperature Range
Symbol
V
DS
VGS
ID
IDM
PD
IF (AV)
TJ, TSTG
Max.
30
±20
8.3
6.6
66
2.5
1.6
3.7
2.3
–55 to 150
Units
V
A
W
A
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
www.irf.com
RθJA
RθJL
Max.
50
20
Units
°C/W
°C/W
1
10/08/04
1 page  
IRF7807VD2PbF
2.0 ID = 7.0A
1.5
0.030
0.025
1.0 0.020
ID = 7.0A
0.5 0.015
VGS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
0.010
2.0
4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate -to -Source Voltage (V)
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 7. On-Resistance Vs. Gate Voltage
70
VGS
TOP
60
4.5V
3.5V
3.0V
2.5V
50 2.0V
BOTTOM 0.0V
40
70
VGS
60 TOP
4.5V
3.5V
3.0V
2.5V
50 2.0V
BOTTOM 0.0V
40
30 30
20 0.0 V
10
0
0
380µs PULSE WIDTH
Tj = 25°C
0.2 0.4 0.6 0.8
VSD, Source-to-Drain Voltage (V)
1
Fig 7. Typical Reverse Output Characteristics
20
10
0
0
O.OV
380µS PULSE WIDTH
Tj = 150°C
0.2 0.4 0.6 0.8
VSD, Source-to-Drain Voltage (V)
1
Fig 8. Typical Reverse Output Characteristics
www.irf.com
5
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| PDF Descargar | [ Datasheet IRF7807VD2PbF.PDF ] | |
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