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PDF B6010D Data sheet ( Hoja de datos )

Número de pieza B6010D
Descripción N-Channel 60-V (D-S) MOSFET
Fabricantes BiTEK 
Logotipo BiTEK Logotipo



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No Preview Available ! B6010D Hoja de datos, Descripción, Manual

N-Channel 60-V (D-S) MOSFET
B6010D
General Description
The B6010D is the N-Channel logic enhancement
mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suited for low voltage application such
as cellular phone and notebook computer power
management and other battery powered circuits
where high-side switching and low in-line power
loss are needed in a very small outline surface
mount package.
Pin Configuration
Features
RDS(ON)=90m@VGS=10V
RDS(ON)=120m@VGS=4.5V
Super High Density Cell Design for
Extremely Low RDS(ON)
Exceptional On-Resistance and
Maximum DC Current
SOP-8 Package
Applications
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
Absolute Maximum Ratings (TA=25 Unless Otherwise Noted):
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current(tJ=150 )
TA=25
TA=70
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA=25
Maximum Power Dissipation
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Case
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
RθJC
N-Channel
60
±20
12
9
30
1.7
2.0
1.44
-55 to 150
48
Unit
V
V
A
A
A
W
/W
Confidential material for authorized user only and BiTEK
reserves the utmost right upon the information contained herein.
8
www.BiTEK.com.tw

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