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PDF LBC807-25WT1G Data sheet ( Hoja de datos )
| Número de pieza | LBC807-25WT1G | |
| Descripción | General Purpose Transistors | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽCollector current capability IC = -500 mA.
ƽCollector-emitter voltage VCEO(max) = -45 V.
ƽGeneral purpose switching and amplification.
ƽPNP complement: LBC807 Series.
ƽWe declare that the material of product compliance with RoHS requirements.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
LBC807-25WT1G
S-LBC807-25WT1G
LBC807-25WT3G
S-LBC807-25WT3G
Marking
5B
5B
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
–45
–50
–5.0
–500
Unit
V
V
V
mAdc
LBC807-25WT1G
S-LBC807-25WT1G
3
1
2
SOT–323
1
BASE
3
COLLECTOR
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T A =25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
PD
R θJA
PD
R θJA
T J , Tstg
Max
150
1.2
833
200
1.6
625
–55to+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Rev.O 1/3
1 page | ||
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| PDF Descargar | [ Datasheet LBC807-25WT1G.PDF ] | |
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