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Número de pieza | RJK6024DP3-A0 | |
Descripción | High Speed Power Switching MOS FET | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RJK6024DP3-A0 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! RJK6024DP3-A0
600 V - 0.4 A - MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 28 Ω typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C)
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSP0004ZB-A
(Package name: SOT-223)
4
3
2
1
G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
Pch Note2
θch-c
Tch
Tstg
Preliminary Datasheet
R07DS1106EJ0100
Rev.1.00
Aug 23, 2013
D
1. Gate
2. Drain
3. Source
4. Drain
S
Ratings
600
±30
0.4
0.6
0.4
0.6
1.04
120
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
R07DS1106EJ0100 Rev.1.00
Aug 23, 2013
Page 1 of 6
1 page RJK6024DP3-A0
3
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
D=1
1
0.5
0.3 0.2
0.1
0.1 0.05
0.02
0.03
0.01
1shot
pulse
θch – a(t) = γs (t) • θch – a
θch – a = 120°C/W, Ta = 25°C
PDM
D=
PW
T
PW
T
0.01
10 μ
100 μ
1m
10 m 100 m
1
Pulse Width PW (s)
10 100 1000
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
V DD
= 300 V
Waveform
Vin
Vout
10%
10%
90%
td(on)
tr
90%
10%
90%
td(off)
tf
R07DS1106EJ0100 Rev.1.00
Aug 23, 2013
Page 5 of 6
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet RJK6024DP3-A0.PDF ] |
Número de pieza | Descripción | Fabricantes |
RJK6024DP3-A0 | High Speed Power Switching MOS FET | Renesas Technology |
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