|
|
PDF IRF9388TRPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF9388TRPbF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRF9388TRPbF (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
VDS
VGS max
RDS(on) max
(@VGS = -10V)
ID
(@TA = 25°C)
-30
±25
11.9
-12
V
V
mΩ
A
6
6
6
*
PD - 97521
IRF9388PbF
HEXFET® Power MOSFET
'
'
'
'
SO-8
Applications
• Adaptor Input Switch for Notebook PC
Features and Benefits
Features
25V VGS max
Industry-Standard SO8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
Direct Drive at High VGS
Multi-Vendor Compatibility
Environmentally Friendlier
Orderable part number
IRF938 8Pb F
IRF938 8TRPb F
Package Type
SO8
SO8
Standard Pack
For m
Quantity
Tu be/B ulk
95
Tape and Reel
4 000
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes through are on page 2
www.irf.com
Max.
-30
± 25
-12
-9.6
-96
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
1
6/4/10
1 page  
50
ID = -12A
40
30
20 TJ = 125°C
10
0
0
TJ = 25°C
5 10 15 20
-V GS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
500
ID
TOP -2.3A
400 -3.3A
BOTTOM -9.6A
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
IRF9388PbF
60
50
40
30
20 VGS = -4.5V
10
VGS = -10V
0
0 10 20 30 40 50 60
-ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
1000
800
600
400
200
0
1E-5
1E-4
1E-3
1E-2
Time (sec)
1E-1
Fig 16. Typical Power vs. Time
1E+0
D.U.T * +
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
+ Current Transformer
-
- +
RG
• di/dt controlled by RG
• Driver same type as D.U.T.
VDD
+
• ISD controlled by Duty Factor "D"
-
• D.U.T. - Device Under Test
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
*VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
IInnductorr CCuurrernetnt
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
VDD
ISD
Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
www.irf.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF9388TRPbF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF9388TRPbF | HEXFET Power MOSFET | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |