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PDF FDMS8888 Data sheet ( Hoja de datos )
| Número de pieza | FDMS8888 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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July 2011
FDMS8888
NNNN
N-Channel PowerTrench® MOSFET
30 V, 21 A, 9.5 m:
Features
General Description
Max rDS(on) = 9.5 m: at VGS = 10 V, ID = 13.5 A
Max rDS(on) = 14.5 m: at VGS = 4.5 V, ID = 10.9 A
Advanced Package and Silicon combination
for low rDS(on) and high efficiency
The FDMS8888 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.
MSL1 robust package design
RoHS Compliant
Applications
Synchronous Buck for Notebook Vcore and Server
Notebook Battery Pack
Load Switch
Top Bottom
Pin 1
S
S
S
G
D
D
D
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Drain to Source Voltage
Parameter
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D5
D6
D7
D8
(Note 1a)
(Note 3)
(Note 1a)
4G
3S
2S
1S
Ratings
30
±20
21
51
13.5
80
54
42
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.3
50
°C/W
Device Marking
8888
Device
FDMS8888
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMS8888 Rev.C
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.003
10-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RTJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2011 Fairchild Semiconductor Corporation
FDMS8888 Rev.C
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMS8888.PDF ] | |
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