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PDF IRF9392TRPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF9392TRPbF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDS
VGS max
RDS(on) max
(@VGS = -10V)
ID
(@TA = 25°C)
-30
±25
17.5
-9.8
V
V
mΩ
A
PD - 97571
IRF9392PbF
HEXFET® Power MOSFET
6
6
6
*
'
'
'
'
SO-8
Applications
• Adaptor Input Switch for Notebook PC
Features and Benefits
Features
25V VGS max
Industry-Standard SO8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
Direct Drive at High VGS
Multi-Vendor Compatibility
Environmentally Friendlier
Orderable part number
IRF9392PbF
IRF9392TRPbF
Package Type
SO8
SO8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS @ -10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Notes through are on page 2
www.irf.com
Max.
-30
±25
-9.8
-7.8
-80
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
1
09/30/2010
1 page  
50
ID = -9.8A
40
30
20 TJ = 125°C
10
TJ = 25°C
0
0 5 10 15 20 25
-VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
500
ID
TOP -2.0A
400 -2.8A
BOTTOM -7.8A
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
IRF9392PbF
50
40
Vgs = -4.5V
30
20
10 Vgs = -10V
0
0 10 20 30 40 50 60 70 80
-ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
1000
800
600
400
200
0
1E-5
1E-4
1E-3
1E-2
1E-1
Time (sec)
Fig 15. Typical Power vs. Time
1E+0
D.U.T * +
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
+ Current Transformer
-
- +
RG
• di/dt controlled by RG
• Driver same type as D.U.T.
VDD
+
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
*VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
IInnductorr CCuurrernetnt
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
VDD
ISD
Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
www.irf.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF9392TRPbF.PDF ] | |
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