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PDF IRF8714GPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF8714GPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96263
IRF8714GPbF
Applications
l Control MOSFET of Sync-Buck
Converters used for Notebook
Processor Power
l Control MOSFET for Isolated DC-DC
Converters in Networking Systems
Benefits
l Very Low Gate Charge
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg
:8.7m @VGS = 10V 8.1nC
S1
S2
S3
G4
AA
8D
7D
6D
5D
l 20V VGS Max. Gate Rating
l 100% tested for Rg
Top View
SO-8
l Lead-Free
l Halogen-Free
Description
The IRF8714GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8714GPbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for Notebook and Netcom applications.
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
30
± 20
14
11
110
2.5
1.6
Units
V
A
W
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.02
-55 to + 150
W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fRθJA Junction-to-Ambient
Notes through
are on page 9
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
07/10/09
1 page  
14
12
10
8
6
4
2
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Ambient Temperature
IRF8714GPbF
2.5
2.0
ID = 25µA
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.1
0.01
0.001
1E-006
R 1R 1
R 2R 2
R 3R 3
R 4R 4
Ri (°C/W) τi (sec)
τJ τJ
τ1 τ1
τ2 τ2
τ3 τ3
τ4 τ4
τAτA
1.9778
7.4731
26.2617
0.000165
0.022044
0.82275
Notes:
1. Duty Factor D = t1/t2
Ci= τi/Ri
Ci= τi/Ri
14.2991 28.4
2. Peak Tj = P dm x Zthja + T A
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF8714GPbF.PDF ] | |
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