|
|
Número de pieza | IRLMS2002PbF | |
Descripción | HEXFET Power MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRLMS2002PbF (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! PD- 95675
IRLMS2002PbF
l Ultra Low On-Resistance
l N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 2.5V Rated
l Lead-Free
D
D
G
Description
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The Micro6™ package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
HEXFET® Power MOSFET
A
1 6D
VDSS = 20V
2 5D
3 4 S RDS(on) = 0.030Ω
Top View
Micro6™
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Max.
20
6.5
5.2
20
2.0
1.3
0.016
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Max.
62.5
Units
°C/W
1
1/18/05
1 page IRLMS2002PbF
6.0
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.20
0.10
0.00
-0.10
Id = 250µA
-0.20
-0.30
-0.40
-50 -25
0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Typical Vgs(th) Variance Vs.
Juction Temperature
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
100
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRLMS2002PbF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRLMS2002PbF | HEXFET Power MOSFET | International Rectifier |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |