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PDF TMPF7N60 Data sheet ( Hoja de datos )

Número de pieza TMPF7N60
Descripción FET
Fabricantes TRinno 
Logotipo TRinno Logotipo



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No Preview Available ! TMPF7N60 Hoja de datos, Descripción, Manual

Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP7N60/TMPF7N60
TMP7N60G/TMPF7N60G
VDSS = 660 V @Tjmax
ID = 7A
RDS(on) = 1.25 W(max) @ VGS= 10 V
D
G
S
Device
TMP7N60 / TMPF7N60
TMP7N60G / TMPF7N60G
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP7N60 / TMPF7N60
TMP7N60G / TMPF7N60G
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP7N60(G) TMPF7N60(G)
600
±30
7 7*
4.3 4.3 *
28 28*
200
7
14.3
143 46.6
1.16 0.37
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
April 2010 : Rev1
www.trinnotech.com
TMP7N60(G)
0.87
62.5
TMPF7N60(G)
2.68
62.5
Unit
/W
/W
1/5

1 page




TMPF7N60 pdf
TMP7N60/TMPF7N60
TMP7N60G/TMPF7N60G
100
Duty=0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
10-5
10-4
TMP7N60(G)
single pulse
PDM
t
T
Duty = t/T
Z (t) = 0.87 /W Max.
thJC
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
TMPF7N60(G)
Duty=0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
10-2
10-5
10-4
single pulse
PDM
t
T
Duty = t/T
Z (t) = 2.68 /W Max.
thJC
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
April 2010 : Rev1
www.trinnotech.com
5/5

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