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PDF IRFR110 Data sheet ( Hoja de datos )

Número de pieza IRFR110
Descripción N-Channel Power MOSFETs
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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Data Sheet
IRFR110, IRFU110
January 2002
4.7A, 100V, 0.540 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These advanced
power MOSFETs are designed for use in applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These transistors can be operated directly from integrated
circuits.
Formerly developmental type TA17441.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFU110
TO-251AA
IFU110
IRFR110
TO-252AA
IFR110
NOTE: When ordering, use the entire part number.
Features
• 4.7A, 100V
• rDS(ON) = 0.540
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
©2002 Fairchild Semiconductor Corporation
IRFR110, IRFU110 Rev. B

1 page




IRFR110 pdf
IRFR110, IRFU110
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. DRAIN TO SOURCE BREAKDOWN VOLTAGE vs
JUNCTION TEMPERATURE
500
VGS = 0V, f = 1MHz
CISS = CGS + CGD
400
CRSS = CGD
COSS CDS + CGS
300
200
100
0
1
CISS
COSS
CRSS
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
102
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS 50V
2.0
TJ = 25oC
1.5
TJ = 175oC
1.0
0.5
0
0 2 4 6 8 10
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
102
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
TJ = 175oC
1.0
TJ = 25oC
0.1
0
0.4 0.8 1.2 1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
2.0
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 5.6A
16
12
VDS = 80V
VDS = 50V
VDS = 20V
8
4
0
0 2 4 6 8 10
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2002 Fairchild Semiconductor Corporation
IRFR110, IRFU110 Rev. B

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