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PDF NCP45540 Data sheet ( Hoja de datos )
| Número de pieza | NCP45540 | |
| Descripción | Advanced Load Management | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NCP45540 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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NCP45540
ecoSWITCHt
Advanced Load Management
Controlled Load Switch with Low RON
The NCP45540 load switch provides a component and
area-reducing solution for efficient power domain switching with
inrush current limit via soft−start. In addition to integrated control
functionality with ultra low on−resistance, this device offers system
safeguards and monitoring via fault protection and power good
signaling. This cost effective solution is ideal for power management
and hot-swap applications requiring low power consumption in a
small footprint.
Features
• Advanced Controller with Charge Pump
• Integrated N-Channel MOSFET with Low RON
• Input Voltage Range 0.5 V to 13.5 V
• Soft-Start via Controlled Slew Rate
• Adjustable Slew Rate Control
• Power Good Signal
• Thermal Shutdown
• Undervoltage Lockout
• Short-Circuit Protection
• Extremely Low Standby Current
• Load Bleed (Quick Discharge)
• This is a Pb−Free Device
Typical Applications
• Portable Electronics and Systems
• Notebook and Tablet Computers
• Telecom, Networking, Medical, and Industrial Equipment
• Set−Top Boxes, Servers, and Gateways
• Hot−Swap Devices and Peripheral Ports
VCC EN PG
VIN
Bandgap
&
Biases
Control
Logic
Thermal,
Undervoltage
&
Short−Circuit
Protection
Charge
Pump
Delay and
Slew Rate
Control
SR
GND
BLEED
Figure 1. Block Diagram
VOUT
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RON TYP
3.3 mW
3.6 mW
4.8 mW
VCC
3.3 V
3.3 V
3.3 V
VIN
1.8 V
5.0 V
12 V
IMAX
20 A
1
DFN12, 3x3
CASE 506CD
MARKING DIAGRAM
NCP45
540−x
ALYWG
G
x = H for NCP45540−H
= L for NCP45540−L
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONFIGURATION
VIN 1
EN 2
VCC 3
GND 4
SR 5
13: VIN
12 VOUT
11 VOUT
10 VOUT
9 VOUT
8 NC
PG 6
(Top View)
7 BLEED
ORDERING INFORMATION
See detailed ordering and shipping information on page 12 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
February, 2015 − Rev. 3
1
Publication Order Number:
NCP45540/D
1 page  
NCP45540
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
6.0 9
5.5
8 VCC = 3.3 V
VIN = 12 V
7
5.0
6
4.5
VCC = 3 V
5
4.0
VCC = 5.5 V
4
3.5 3
VIN = 5.0 V
VIN = 1.8 V
3.0
0.5 2.5 4.5 6.5 8.5 10.5 12.5
VIN, INPUT VOLTAGE (V)
Figure 3. On−Resistance vs. Input Voltage
2
−45 −30 −15 0 15 30 45 60 75 90 105 120
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. On−Resistance vs. Temperature
3.5
3.0
2.5
2.0
1.5
1.0
0.5
3.0 3.5 4.0 4.5 5.0 5.5
VCC, SUPPLY VOLTAGE (V)
Figure 5. Supply Standby Current vs. Supply
Voltage
550
500
450
400
350
300 VCC = 5.5 V
250
200 VCC = 3 V
150
0.5 2.5 4.5 6.5 8.5 10.5 12.5
VIN, INPUT VOLTAGE (V)
Figure 7. Supply Dynamic Current vs. Input
Voltage
7
6
5
4
3 VCC = 5.5 V
2
1 VCC = 3 V
0
−45 −30 −15 0 15 30 45 60 75 90 105 120
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Supply Standby Current vs.
Temperature
600
550
500
VIN = 1.8 V
450
400
350
300
VIN = 12 V
250
200
150
3.0 3.5 4.0 4.5 5.0 5.5
VCC, SUPPLY VOLTAGE (V)
Figure 8. Supply Dynamic Current vs. Supply
Voltage
www.onsemi.com
5
5 Page 
NCP45540
Thermal Shutdown
The thermal shutdown of the NCP45540 devices protects
the part from internally or externally generated excessive
temperatures. This circuitry is disabled when EN is not
active to reduce standby current. When an over−temperature
condition is detected, the MOSFET is immediately turned
off and the load bleed is activated.
The part comes out of thermal shutdown when the
junction temperature decreases to a safe operating
temperature as dictated by the thermal hysteresis. Upon
exiting a thermal shutdown state, and if EN remains active,
the MOSFET will be turned on in a controlled fashion with
the normal output turn−on delay and slew rate.
Undervoltage Lockout
The undervoltage lockout of the NCP45540 devices turns
the MOSFET off and activates the load bleed when the input
voltage, VIN, is less than or equal to the undervoltage
lockout threshold. This circuitry is disabled when EN is not
active to reduce standby current.
If the VIN voltage rises above the undervoltage lockout
threshold, and EN remains active, the MOSFET will be
turned on in a controlled fashion with the normal output
turn−on delay and slew rate.
3.0 V − 5.5 V
Controller
VTERM = 3.3 V
RPG
100 kW
Power Supply
or Battery
0.5 V − 13.5 V
Bandgap
&
Biases
Control
Logic
Charge
Pump
Delay and
Slew Rate
Control
Thermal,
Undervoltage
&
Short−Circuit
Protection
CSR
REXT
Load
Figure 30. Typical Application Diagram − Load Switch
www.onsemi.com
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet NCP45540.PDF ] | |
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