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PDF NCP339 Data sheet ( Hoja de datos )

Número de pieza NCP339
Descripción 3A Ultra-Small Controlled Load Switch
Fabricantes ON Semiconductor 
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No Preview Available ! NCP339 Hoja de datos, Descripción, Manual

NCP339
3 A Ultra-Small Controlled
Load Switch with
Auto-Discharge Path and
Reverse Current Control
The NCP339 is a very low Ron MOSFET controlled by external
logic pin, allowing optimization of battery life, and portable device
autonomy.
Indeed, due to a current consumption optimization with PMOS
structure, leakage currents are eliminated by isolating connected IC on
the battery when not used.
Reverse blocking control is automatically engage if OUT pin
voltage is higher than IN pin voltage, eliminate leakages current from
OUT to IN.
Proposed in a wide input voltage range from 1.2 V to 5.5 V, in a
small 1 x 1.5 mm WLCSP6, pitch 0.5 mm.
Features
1.2 V 5.5 V Operating Range
19 mW P MOSFET at 4.5 V
DC Current up to 3 A
Soft Start Control
Low Quiescent Current
Reverse Blocking
Active High EN pin
WLCSP6 1 x 1.5 mm
This is a PbFree Device
Typical Applications
Mobile Phones
Tablets
Digital Cameras
GPS
Portable Devices
Computers
http://onsemi.com
WLCSP6, 1.00x1.50
CASE 567FH
MARKING DIAGRAM
XX
AYWG
G
XX = NP or DP
A = Assembly Location
Y = Year
W = Work Week
G = PbFree Package
(*Note: Microdot may be in either location)
PACKAGE PINOUT DIAGRAM
12
A OUT IN
B OUT IN
C GND EN
(Top View)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 9 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
November, 2013 Rev. 2
1
Publication Order Number:
NCP339/D

1 page




NCP339 pdf
NCP339
Table 4. ELECTRICAL CHARACTERISTICS
Min & Max Limits apply for TA between 40°C to +85°C for VIN between 1.2 V to 5.5 V (Unless otherwise noted).
Typical values are referenced to TA = +25°C and VIN = 5 V (Unless otherwise noted).
Symbol
Parameter
Conditions
Min
TEN
TR
TON
TDIS
TF
TOFF
Enable time
Output rise time
ON time (TEN + TR)
Disable time
Fall time
Output fall time
(TF + TDIS)
Vin = 4.2 V
(Note 6)
RL = 150 W, Cout = 100 mF
5. Guaranteed by design and characterization.
6. Parameters are guaranteed for CLOAD and RLOAD connected to the OUT pin with respect to the ground.
Typ
1.7
1.5
3.2
1.8
4
42
Max
Unit
ms
Vin
EN
Vout
TEN TR
TON
Figure 3. Timings
TDIS TF
TOFF
http://onsemi.com
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