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PDF G4PC50F Data sheet ( Hoja de datos )
| Número de pieza | G4PC50F | |
| Descripción | IRG4PC50F | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de G4PC50F (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PD 91468C
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50F
Fast Speed IGBT
Features
• Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.45V
@VGE = 15V, IC = 39A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
600
70
39
280
280
± 20
20
200
78
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.64
–––
40
–––
Units
°C/W
g (oz)
1
12/30/00
1 page  
IRG4PC50F
8000
6000
VGE = 0V
f = 1 MHz
Cies = Cge + Cgc + Cce
Cres = Cce
Coes = Cce + Cgc
SHORTED
Cies
4000
Coes
2000
Cres
0A
1 10 100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCE = 400V
IC = 39A
16
12
8
4
0A
0 40 80 120 160 200
Qg , Total G ate Charge (nC )
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.8
VCC = 480V
VGE = 15V
3.6 TJ = 25°C
IC = 39A
3.4
3.2
3.0
2.8
2.6
2.4
0
A
10 20 30 40 50 60
R G , Gate Resistance ( Ω )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
100
RG = 5.0 Ω
VGE = 15V
VCC = 480V
10
1
IC = 78A
IC = 39A
IC = 20A
0.1 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet G4PC50F.PDF ] | |
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