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PDF ZXMN10A08E6TA Data sheet ( Hoja de datos )
| Número de pieza | ZXMN10A08E6TA | |
| Descripción | 100V N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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Product Summary
V(BR)DSS
100V
Max RDS(on)
250mΩ @ VGS = 10V
300mΩ @ VGS = 6V
Max ID
TA = 25°C
(Note 5)
1.9A
1.68A
Description and Applications
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
• DC - DC converters
• Power management functions
• Disconnect switches
• Motor control
SOT26
A Product Line of
Diodes Incorporated
ZXMN10A08E6
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low on-resistance
• Fast switching speed
• Totally Lead-Free & Fully RoHS compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.015 grams (approximate)
Top View
Pinout Top-view
Device symbol
Ordering Information (Note 3)
Part Number
ZXMN10A08E6TA
ZXMN10A08E6TC
Reel Size (inch)
7
13
Tape Width (mm)
8
8
Quantity Per Reel
3000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
10A8 = Product Type Marking Code
ZXMN10A08E6
Datasheet Number: DS31909 Rev. 8 – 2
1 of 7
www.diodes.com
March 2012
© Diodes Incorporated
1 page  
A Product Line of
Diodes Incorporated
ZXMN10A08E6
Typical characteristics - Continued
600
500
400
300
200
V = 0V
GS
f = 1MHz
C
ISS
C
OSS
C
RSS
100
0
0.1 1
10 100
V - Drain - Source Voltage (V)
DS
Capacitance v Drain-Source Voltage
10
I = 1.2A
D
8
6
4
2
V = 50V
DS
0
01234567
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
8
Test Circuits
ZXMN10A08E6
Datasheet Number: DS31909 Rev. 8 – 2
5 of 7
www.diodes.com
March 2012
© Diodes Incorporated
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ZXMN10A08E6TA.PDF ] | |
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