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PDF IRL6342PbF Data sheet ( Hoja de datos )

Número de pieza IRL6342PbF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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VDS
VGS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TA = 25°C)
30
±12
14.6
11
9.9
V
V
m
nC
A
Applications
Battery operated DC motor inverter MOSFET
System/Load Switch
PD - 97617
IRL6342PbF
HEXFET® Power MOSFET
6
6
6
*
'
'
'
'
SO-8
Features and Benefits
Features
Industry-Standard SO-8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Resulting Benefits
Multi-Vendor Compatibility
Environmentally Friendlier
Increased Reliability
Orderable part number
IRL6342PBF
IRL6342TRPBF
Package Type
SO-8
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS @ 4.5V
cPulsed Drain Current
ePower Dissipation
ePower Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Notes  through „ are on page 2
www.irf.com
Max.
30
±12
9.9
7.9
79
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
1
01/03/11

1 page




IRL6342PbF pdf
40
ID = 9.9A
35
30
25
20 TJ = 125°C
15
10
TJ = 25°C
5
1 2 3 4 5 6 7 8 9 10 11 12
Fig
12.
OVGn-SR, Gesatiest-aton-cSeouvrsce.
Voltage (V)
Gate Voltage
250
ID
TOP 1.3A
200 1.9A
BOTTOM 7.9A
150
100
50
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
IRL6342PbF
40
35
30
Vgs = 2.5V
25
20
Vgs = 4.5V
15
10
0 10 20 30 40 50 60 70 80
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
30000
25000
20000
15000
10000
5000
0
1E-8
1E-7
1E-6 1E-5
Time (sec)
1E-4
1E-3
Fig 15. Typical Power vs. Time
+
‚
-

RG
www.irf.com
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
VDD +
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
5

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