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Número de pieza | UPA621TT | |
Descripción | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
Fabricantes | NEC | |
Logotipo | ||
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No Preview Available ! DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA621TT
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA621TT is a switching device, which can be driven directly by a
2.5 V power source.
This device features a low on-state resistance and excellent switching
characteristics, and is suitable for applications such as power switch of
portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2.5 A)
RDS(on)2 = 53 mΩ MAX. (VGS = 4.0 V, ID = 2.5 A)
RDS(on)3 = 79 mΩ MAX. (VGS = 2.5 V, ID = 2.5 A)
PACKAGE DRAWING (Unit: mm)
2.0 ±0.2
6 54
1 23
0~0.05
0.65 0.65
S
MAX. 0.8
ORDERING INFORMATION
PART NUMBER
µPA621TT
Marking: WB
PACKAGE
6pinWSOF (1620)
0.05 S
1,2,5,6 : Drain
3 : Gate
4 : Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
Gate to Source Voltage (VDS = 0 V)
VGSS
±12
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±5.0
±20
Total Power Dissipation
Total Power Dissipation Note2
PT1 0.2
PT2 1.4
Channel Temperature
Tch 150
Storage Temperature
Tstg −55 to +150
V
V
A
A
W
W
°C
°C
0.2
+0.1
−0.05
0.1 M S
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16112EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
©
2002
1 page µPA621TT
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
100
VGS = 4.5 V
Pulsed
80 TA = 125°C
60
40
20
0.01
75°C
25°C
−25°C
0.1 1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
120
VGS = 2.5 V
Pulsed
100 TA = 125°C
75°C
80 25°C
−25°C
60
40
0.01
0.1 1 10
ID - Drain Current - A
100
1000
100
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
VGS = 0 V
f = 1.0 MHz
Ciss
Coss
Crss
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
100
VGS = 4.0 V
Pulsed
TA = 125°C
80
75°C
60 25°C
40
20
0.01
−25°C
0.1 1 10
ID - Drain Current - A
100
SWITCHING CHARACTERISTICS
1000
VDD = 10 V
VGS = 4.0 V
RG = 10 Ω
tr
100
td(off)
tf
10
0.1
td(on)
1
ID - Drain Current - A
10
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
10
1 VGS = 0 V
0.1
10
0.1
1 10
VDS - Drain to Source Voltage - V
0.01
100 0.4
Data Sheet G16112EJ1V0DS
0.6 0.8 1 1.2
VF(S-D) - Source to Drain Voltage - V
1.4
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet UPA621TT.PDF ] |
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