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PDF DMN3029LFG Data sheet ( Hoja de datos )
| Número de pieza | DMN3029LFG | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
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DMN3029LFG
Green
N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
V(BR)DSS
30V
RDS(ON)
18.6mΩ @ VGS = 10V
26.5mΩ @ VGS = 4.5V
ID
TA = 25°C
8.0A
6.5A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• Backlighting
• DC-DC Converters
• Power management functions
Features
• Low RDS(ON) – ensures on state losses are minimized
• Small form factor thermally efficient package enables higher
density end products
• Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
• 100% UIS (Avalanche) rated
• 100% Rg tested
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: POWERDI3333-8
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.072 grams (approximate)
POWERDI3333-8
S Pin 1
S
S
G
Top View
D
D
D
D
Bottom View
18
27
36
45
Top View
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMN3029LFG-7
DMN3029LFG-13
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2000 / Tape & Reel
3000 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
N39 = Product marking code
YYWW = Date code marking
YY = Last digit of year (ex: 10 for 2010)
WW = Week code (01 – 53)
POWERDI is a registered trademark of Diodes Incorporated.
DMN3029LFG
Document number: DS35448 Rev. 7 - 2
1 of 7
www.diodes.com
October 2012
© Diodes Incorporated
1 page  
2
1.5
ID = 1mA
ID = 250µA
1
0.5
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
1,000
f = 1MHz
CISS
100
COSS
CRSS
10
0
4 8 12 16
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Total Capacitance
20
DMN3029LFG
30
25
20
TA = 25°C
15
10
5
0
0
10,000
0.2 0.4 0.6 0.8 1.0 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
1,000
100
10
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
1
0 10 20 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Leakage Current
vs. Drain-Source Voltage
POWERDI is a registered trademark of Diodes Incorporated.
DMN3029LFG
Document number: DS35448 Rev. 7 - 2
5 of 7
www.diodes.com
October 2012
© Diodes Incorporated
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DMN3029LFG.PDF ] | |
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