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PDF LBAV99LT3G Data sheet ( Hoja de datos )

Número de pieza LBAV99LT3G
Descripción Dual Series Switching Diode
Fabricantes Leshan Radio Company 
Logotipo Leshan Radio Company Logotipo



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No Preview Available ! LBAV99LT3G Hoja de datos, Descripción, Manual

LESHAN RADIO COMPANY, LTD.
Dual Series Switching Diode
We declare that the material of product compliance with RoHS
requirements.
S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
.
LBAV99LT1G
S-LBAV99LT1G
3
1
2
SOT–23
DEVICE MARKING ORDERING INFORMATION
1
ANODE
3
CAHODE/ANODE
2
CATHODE
Device
Marking
Shipping
LBAV99LT1G
S-LBAV99LT1G
LBAV99LT3G
S-LBAV99LT3G
A7
A7
3000 Tape & Reel
10000 Tape & Reel
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current (1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current
t = 1.0 µ s
t = 1.0 ms
t = 1.0 S
Symbol
VR
IF
I FM(surge)
V RRM
I F(AV)
I FRM
I FSM
Value
70
215
500
70
715
450
2.0
1.0
0.5
Unit
Vdc
mAdc
mAdc
V
mA
mA
A
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR–5 Board, (1) T A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max
225
1.8
556
300
2.4
417
–65 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Rev.O 1/4

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