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PDF LBAV70LT3G Data sheet ( Hoja de datos )
| Número de pieza | LBAV70LT3G | |
| Descripción | Monolithic Dual Switching Diode | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
Common Cathode
●FEATURES
1)We declare that the material of product compliant with RoHS
requirements and Halogen Free.
2)S- Prefix for automotive and other applications requiring unique
site and control change requirements; AEC-Q101 qualified and
PPAP capable.
●DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBAV70LT1G A4 3000/Tape&Reel
LBAV70LT3G
A4 10000/Tape&Reel
LBAV70LT1G
S-LBAV70LT1G
3
1
2
SOT-23
●MAXIMUM RATINGS(Ta = 25℃)
Parameter
Symbol
Reverse Voltage
VR
Forward Current
IF
Peak Forward Surge Current IFM(surge)
Limits
70
200
500
Unit
Vdc
mAdc
mAdc
3
CATHODE
1
ANODE
2
ANODE
●THERMAL CHARACTERISTICS
Parameter Symbol
Total Device Dissipation FR–5 Board(Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate(Note 2)
T A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Rθ JA
PD
Rθ JA
T J , T stg
Max.
225
1.8
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
●ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Reverse Breakdown Voltage(I(BR)=100uA)
V(BR)
Min
70
Max.
—
Reverse Voltage Leakage Current
IR
(VR = 25 Vdc, TJ = 150°C)
— 60
(VR = 70 Vdc)
— 2.5
(VR = 70 Vdc, TJ = 150°C)
— 100
Diode Capacitance (VR = 0, f = 1.0 MHz)
CD
—
1.5
Forward Voltage (IF = 1.0 mAdc)
VF —
715
(IF = 10 mAdc)
— 855
(IF = 50 mAdc)
— 1000
(IF = 150 mAdc)
— 1250
Reverse Recovery Time (Figure 1)
trr —
6
I F=IR=10mAdc,iR(REC)=1.0 mAdc,RL =100 Ω )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Unit
Vdc
uAdc
pF
mVdc
ns
May,2015
Rev.A 1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LBAV70LT3G.PDF ] | |
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