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PDF LBAS20LT3G Data sheet ( Hoja de datos )
| Número de pieza | LBAS20LT3G | |
| Descripción | High Voltage Switching Diode | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
High Voltage Switching Diode
FEATURE
• We declare that the material of product
compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
LBAS20LT1G
S-LBAS20LT1G
LBAS20LT3G
S-LBAS20LT3G
Marking
JR
JR
Shipping
3000/Tape&Reel
10000/Tape&Reel
LBAS20LT1G
S-LBAS20LT1G
3
1
2
SOT– 23
3
CATHODE
1
ANODE
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM(surge)
Value
200
200
625
Unit
Vdc
mAdc
mAdc
THERMALCHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,*
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
*FR–5 Minimum Pad
Symbol
PD
RθJA
TJ, Tstg
Max
200
1.57
–55 to+150
Unit
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
IR
(VR = 200 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 µAdc)
V(BR)
Forward Voltage
VF
(IF = 100 mAdc)
(IF = 200 mAdc)
Diode Capacitance
CD
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 Ω)
trr
Min
–
–
200
–
–
–
–
Max
1.0
100
–
1000
1250
5.0
50
Unit
µAdc
Vdc
mV
pF
ns
Rev.O 1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LBAS20LT3G.PDF ] | |
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