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PDF LBAL99LT3G Data sheet ( Hoja de datos )
| Número de pieza | LBAL99LT3G | |
| Descripción | Switching Diode | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Switching Diode
Featrues
We declare that the material of product
compliance with RoHS requirements.
Ordering Information
Device
LBAL99LT1G
LBAL99LT3G
Marking
JF
JF
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
DEVICE MARKING
Symbol
VR
IF
Value
70
100
Unit
Vdc
mAdc
LBAL99LT1G = JF
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max
225
1.8
556
300
2.4
417
–55 to +150
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V R = 70 Vdc)
(V R = 25 Vdc, T J = 150°C)
(V R = 70 Vdc, T J = 150°C)
Reverse Breakdown Voltage
(I R = 100 µAdc)
Forward Voltage
(I F = 1.0 mAdc)
(I F = 10 mAdc)
(I F = 50 mAdc)
(I F = 150 mAdc)
Recovery Current
(I F = 10 mAdc, V R = 5.0 Vdc, R L = 500 Ω)
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Reverse Recovery Time
(I F = I R = 10 mAdc, R L = 100 Ω, measured at I R = 1.0 mAdc)
Forward Recovery Voltage
(I F = 10 mAdc, t r = 20 ns)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
IR
V (BR)
VF
QS
CD
t rr
V FR
Min
—
—
—
70
—
—
—
—
—
—
—
—
LBAL99LT1G
3
1
2
SOT–23
3
ANODE
2
CATHODE
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Max
2.5
30
50
—
715
855
1000
1250
45
1.5
6.0
1.75
Unit
µAdc
Vdc
mV
pC
pF
ns
Vdc
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LBAL99LT3G.PDF ] | |
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