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PDF LDAN222T1G Data sheet ( Hoja de datos )
| Número de pieza | LDAN222T1G | |
| Descripción | Common Cathode Silicon Dual Switching Diode | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SC–89 package which is designed for low
power surface mount applications, where board space is at a premium.
• Fast trr
• Low C D
• Available in 8 mm Tape and Reel
• We declare that the material of product compliance
with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
ORDERING INFORMATION
Device
Marking
LDAN222T1G
S-LDAN222T1G
N9
LDAN222T3G
S-LDAN222T3G
N9
Shipping
3000/Tape&Reel
10000/Tape&Reel
LDAN222T1G
S-LDAN222T1G
3
CATHODE
SC-89
1
ANODE
2
ANODE
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current
VR
VRM
IF
IFM
IFSM(1)
Value
80
80
100
300
2.0
Unit
Vdc
Vdc
mAdc
mAdc
Adc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
PD 150 mW
Junction Temperature
TJ 150 °C
Storage Temperature Range Tstg –55 to +150 °C
1. t = 1 µS
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
2. trr Test Circuit on following page.
IR
VF
VR
CD
trr(2)
VR = 70 V
IF = 100 mA
IR = 100 µA
VR = 6.0 V, f = 1.0 MHz
IF = 5.0 mA, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR
Min
—
—
80
—
—
Max Unit
0.1 µAdc
1.2 Vdc
— Vdc
3.5 pF
4.0 ns
Rev.O 1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LDAN222T1G.PDF ] | |
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