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Número de pieza | DMG7430LFG | |
Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
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DMG7430LFG
N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
V(BR)DSS
30V
RDS(ON) max
11mΩ @ VGS = 10V
15mΩ @ VGS = 4.5V
ID max
TA = 25°C
10.5A
9.2A
Features and Benefits
• Low RDS(ON) – ensures on state losses are minimized
• Small form factor thermally efficient package enables higher
density end products
• Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
• " Green” component and RoHS compliant (Note 1)
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Backlighting
• Power Management Functions
• DC-DC Converters
Mechanical Data
• Case: POWERDI®3333-8
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.072 grams (approximate)
POWERDI®3333-8
S Pin 1
S
S
G
D
D
D
D
Bottom View
Top View
18
27
36
45
Top View
Internal Schematic
Ordering Information (Note 2)
Notes:
Part Number
DMG7430LFG-7
DMG7430LFG-13
Case
POWERDI®3333-8
POWERDI®3333-8
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2). All applicable RoHS exemptions applied.
2. For packaging details, go to our website at http://www.diodes.com.
Packaging
2000/Tape & Reel
3000/Tape & Reel
Marking Information
G73
G73 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)
POWERDI is a registered trademark of Diodes Incorporated
DMG7430LFG
Document number: DS35497 Rev. 5 - 2
1 of 7
www.diodes.com
February 2012
© Diodes Incorporated
1 page DMG7430LFG
0.03 2.5
0.02
0.01
VGS = 4.5V
ID = 10A
VGS = 10V
ID = 20A
2.0
ID = 1mA
1.5
ID = 250µA
1.0
0.5
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 10 On-Resistance Variation with Temperature
30
25
20
15 TA = 25°C
10
5
0
0
10,000
0.2 0.4 0.6 0.8 1.0 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig.12 Diode Forward Voltage vs. Current
1,000
100
10
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
1
0 10 20 30 40 50 60 70 80 90 100
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 14 Typical Drain-Source Leakage Current vs. Voltage
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 11 Gate Threshold Variation vs. Ambient Temperature
2,000
1,800
f = 1MHz
1,600
1,400
1,200
1,000
Ciss
800
600
400
200
0
0
Coss
Crss
5 10 15 20 25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Junction Capacitance
30
10
9
VDS = 15V
8 ID = 12A
7
6
5
4
3
2
1
0
0 5 10 15 20 25 30
Qg, TOTAL GATE CHARGE (nC)
Fig. 15 Gate Charge
POWERDI is a registered trademark of Diodes Incorporated
DMG7430LFG
Document number: DS35497 Rev. 5 - 2
5 of 7
www.diodes.com
February 2012
© Diodes Incorporated
5 Page |
Páginas | Total 7 Páginas | |
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