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Número de pieza | RCR1526SQ | |
Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | RCR | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RCR1526SQ (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! RCR1526SQ
P-Channel Enhancement Mode Field Effect Transistor
z Features
VDS(V) = -30V, ID = -5.2A,
RDS(ON) = 51mΩ @VGS = -10V.
RDS(ON) = 68mΩ @VGS = -4.5V.
High density cell design for low RDS(ON).
very small outline surface mount package.
z Pin Configuration
DDD
D
z General Description
This P-Channel enhancement mode power FETs are
produced with high cell density, DMOS trench technology,
which is especially used to minimize on-state resistance. This
device is particularly suited for low voltage application such as
portable equipment, power management and other battery
powered circuits, and low in-line power loss are needed in a
SSSG
z Package Information
⑧ ⑦ ⑥⑤
①② ③④
SOP8
Unit:mm
YKKJPD-V3.1
1/4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet RCR1526SQ.PDF ] |
Número de pieza | Descripción | Fabricantes |
RCR1526SQ | P-Channel Enhancement Mode Field Effect Transistor | RCR |
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