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PDF 2DB1132Q Data sheet ( Hoja de datos )

Número de pieza 2DB1132Q
Descripción 32V PNP POWER SWITCHING TRANSISTOR
Fabricantes Diodes 
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No Preview Available ! 2DB1132Q Hoja de datos, Descripción, Manual

2DB1132P/Q/R
32V PNP POWER SWITCHING TRANSISTOR IN SOT-89
Features
BVCEO > -32V
IC = -1A high Continuous Collector Current
Complementary NPN Type: 2DD1664
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT89
Case material: molded Plastic. “Green” molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.055 grams (Approximate)
SOT89
Top View
C
B
E
Device Symbol
E
CC
B
Pin Out
Top View
Ordering Information (Note 4)
Product
2DB1132P-13
2DB1132Q-13
2DB1132R-13
2DB1132R-13R
Marking
P13P
P13Q
P13R
P13R
Reel size (inches)
13
13
13
13
Tape width (mm)
12
12
12
12
Quantity per reel
2,500
2,500
2,500
4,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
(Top View)
YWW
P13x
P13x = Product Type Marking Code:
Where P13P = 2DB1132P
P13Q = 2DB1132Q
P13R = 2DB1132R
YWW = Date Code Marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
2DB1132P/Q/R
Document number: DS31142 Rev: 6 - 2
1 of 6
www.diodes.com
December 2013
© Diodes Incorporated

1 page




2DB1132Q pdf
TA = -55°C
TA = 25°C
TA = 85°C
TA = 150°C
IC/IB = 10
40
30
20
10
0
2DB1132P/Q/R
250
200
150
100
50
VCE = -5V
f = 30MHz
-IE, EMITTER CURRENT
Fig. 8 Typical Gain-Bandwidth Product vs. Emitter Current
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E
B1
D1 R0.200
H1
B
e
8° (4X)
D
L
A
C
H
SOT89
Dim Min
Max
A 1.40
1.60
B 0.44
0.62
B1 0.35
0.54
C 0.35
0.44
D 4.40
4.60
D1 1.62
1.83
E 2.29
2.60
e 1.50 Typ
H 3.94
4.25
H1 2.63
2.93
L 0.89
1.20
All Dimensions in mm
2DB1132P/Q/R
Document number: DS31142 Rev: 6 - 2
5 of 6
www.diodes.com
December 2013
© Diodes Incorporated

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