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PDF IRFB5615PbF Data sheet ( Hoja de datos )

Número de pieza IRFB5615PbF
Descripción Digital Audio MOSFET
Fabricantes International Rectifier 
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DIGITAL AUDIO MOSFET
PD - 96173
IRFB5615PbF
Features
Key Parameters Optimized for Class-D Audio
Amplifier Applications
Low RDSON for Improved Efficiency
Low QG and QSW for Better THD and Improved
Efficiency
Low QRR for Better THD and Lower EMI
175°C Operating Junction Temperature for
Ruggedness
Can Deliver up to 300W per Channel into 4Load in
Half-Bridge Configuration Amplifier
Key Parameters
VDS 150
RDS(ON) typ. @ 10V
32
Qg typ.
Qsw typ.
RG(int) typ.
26
11
2.7
TJ max
175
DD
V
m:
nC
nC
°C
G
S
S
D
G
TO-220AB
GD S
Gate
Drain
Source
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
fJunction-to-Case
Case-to-Sink, Flat, Greased Surface
fJunction-to-Ambient
Notes  through … are on page 2
www.irf.com
Max.
150
±20
35
25
140
144
72
0.96
-55 to + 175
300
x x10lb in (1.1N m)
Typ.
–––
0.50
–––
Max.
1.045
–––
62
Units
V
A
W
W/°C
°C
Units
°C/W
1
09/05/08

1 page




IRFB5615PbF pdf
IRFB5615PbF
0.4
0.35 ID = 21A
0.3
0.25
0.2
0.15
0.1 TJ = 125°C
0.05
0 TJ = 25°C
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Gate Voltage
100
Duty Cycle = Single Pulse
10 0.01
0.05
0.10
1
500
450 ID
TOP
2.8A
400 5.3A
350 BOTTOM 21A
300
250
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy Vs. Drain Current
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14. Typical Avalanche Current Vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15:
120
100
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 21A
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long as neither
80
60
40
20
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy Vs. Temperature
Tjmax nor Iav (max) is exceeded
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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