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PDF L1SS356T1G Datasheet ( Hoja de datos )

Número de pieza L1SS356T1G
Descripción Band Switching Diode
Fabricantes Leshan Radio Company 
Logotipo Leshan Radio Company Logotipo

Total 3 Páginas
		
L1SS356T1G Hoja de datos, Descripción, Manual
LESHAN RADIO COMPANY, LTD.
Band Switching Diode
z Applications
High frequency switching
z Features
1) Small surface mounting type.
2) High reliability.
3) We declare that the material of product
compliance with RoHS requirements.
z Construction
Silicon epitaxial planar
Driver Marking
L1SS356T1G =B
Absolute maximum ratings (TA=25°C)
Parameter
Symbol
DC reverse voltage
VR
DC forward current
IF
Junction temperature
Tj
Storage temperature
Tstg
Limits
35
100
125
-55~+125
L1SS356T1G
1
2
SOD– 323
1
CATHODE
2
ANODE
Unit
V
mA
°C
°C
Electrical characteristics (TA=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VF – – 1.0 V
Reverse current
IR – – 10 nA
Capacitance between terminals CT
– – 1.2 pF
Forward operating resistance rF – – 0.9
Conditions
IF=10mA
VR=25V
VR=6V, f =1MHz
IF=2mA, f =100MHz
Ordering Information
Device
L1SS356T1G
L1SS356T3G
Marking
B
B
Shipping
3000/Tape&Reel
10000/Tape&Reel
1/3

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