|
|
PDF K2981 Data sheet ( Hoja de datos )
| Número de pieza | K2981 | |
| Descripción | MOSFET ( Transistor ) - 2SK2981 | |
| Fabricantes | NEC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de K2981 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2981
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Low on-resistance
RDS(on)1 = 27 mΩ (MAX.) (VGS = 10 V, ID = 10 A)
RDS(on)2 = 40 mΩ (MAX.) (VGS = 4.5 V, ID = 10 A)
RDS(on)3 = 50 mΩ (MAX.) (VGS = 4 V, ID = 10 A)
• Low Ciss : Ciss = 860 pF (TYP.)
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK2981
TO-251
2SK2981-Z
TO-252
PACKAGE DRAWING (Unit : mm)
6.5 ±0.2
5.0 ±0.2
4
1 23
1.3 MAX.
2.3 ±0.2
0.5 ±0.1
0.6 ±0.1
2.3 2.3
0.6 ±0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
TO-251(MP-3)
6.5 ±0.2
5.0 ±0.2
4
2.3 ±0.2
0.5 ±0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0)
VDSS
30
Gate to Source Voltage (VDS = 0)
VGSS
±20
Drain Current (DC)
Drain Current (Pulse) Note
ID(DC)
ID(pulse)
±20
±80
Total Power Dissipation (Tc = 25 °C) PT 20
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to + 150
V
V
A
A
W
°C
°C
Note PW ≤ 10 µs, Duty cycle ≤ 1 %
12 3
1.3 MAX.
2.3 2.3
0.9 0.8
MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)
TO-252(MP-3Z) (SURFACE MOUNT TYPE)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Document No. D12355EJ1V0DS00 (1st edition)
Date Published December 1998 NS CP(K)
Printed in Japan
© 1998
1 page  
2SK2981
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
60
VGS = 4.0 V
40 4.5 V
10.0 V
20
0 ID = 10 A
− 50 0
50 100 150
Tch - Channel Temperature - ˚C
10000
1000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1 1 10 100
IF - Diode Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
Pulsed
100
VGS = 10 V
10
0V
1
0.1
0 0.5 1.0 1.5
VSD - Source to Drain Voltage - V
1000
100
SWITCHING CHARACTERISTICS
tr
tf
td(off)
10
1
0.1
td(on)
VDD = 15 V
VGS = 10 V
RG = 10 Ω
1 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40 ID = 20 A
VGS = 10 V 14
30 12
VGS
VDD = 24 V
20
15 V
6V
10
8
6
10 4
VDS 2
0
0 3 6 9 12 15 18 21 24
QG - Gate Charge - nC
Data Sheet D12355EJ1V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K2981.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K2981 | MOSFET ( Transistor ) - 2SK2981 | NEC |
| K2983 | MOSFET ( Transistor ) - 2SK2983 | NEC |
| K2984 | MOSFET ( Transistor ) - 2SK2984 | NEC |
| K2985 | MOSFET ( Transistor ) - 2SK2985 |  Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |