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PDF BLM3415 Datasheet ( Hoja de datos )

Número de pieza BLM3415
Descripción P-Channel Enhancement Mode Power MOSFET
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BLM3415 Hoja de datos, Descripción, Manual
Pb Free Product
BLM3415
P-Channel Enhancement Mode Power MOSFET
Description
The BLM3415 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as1.8V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested.
General Features
VDS = -20V,ID =-4A
RDS(ON) < 60m@ VGS=-2.5V
RDS(ON) < 47m@ VGS=-4.5V
ESD Rating: 2500V HBM
High Power and current handing capability
Lead free product is acquired
Surface mount package
Application
PWM application
Load switch
Schematic diagram
Marking and pin Assignment
SOT-23 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
3415
BLM3415
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
-20
±10
-4
-30
1.4
-55 To 150
89.3
Unit
V
V
A
A
W
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Min Typ Max Unit
-20 - V
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BLM3415 pdf
Pb Free Product
BLM3415
Square Wave Pluse Duration(sec)
Figure 13 Normalized Maximum Transient Thermal Impedance
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