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PDF BLM8205A Datasheet ( Hoja de datos )

Número de pieza BLM8205A
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes BELLING 
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BLM8205A Hoja de datos, Descripción, Manual
Pb Free Product
BLM8205A
N-Channel Enhancement Mode Power MOSFET
Description
The BLM8205A uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 19.5V,ID = 6A
RDS(ON) < 37m@ VGS=2.5V
RDS(ON) < 27m@ VGS=4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
D1
G1
G2
D2
S1 S2
Schematic diagram
Marking and pin Assignment
Application
Battery protection
Load switch
Power management
TSSOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
8205A
BLM8205A
TSSOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
19.5
±10
6
25
1.5
-55 To 150
83
Unit
V
V
A
A
W
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=19.5V,VGS=0V
Min Typ Max Unit
19.5 21
--
-
1
V
μA
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Page 1
V2.0

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BLM8205A pdf
Pb Free Product
BLM8205A
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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