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PDF BLM3407A Datasheet ( Hoja de datos )

Número de pieza BLM3407A
Descripción P-Channel Enhancement Mode Power MOSFET
Fabricantes BELLING 
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BLM3407A Hoja de datos, Descripción, Manual
Pb Free Product
BLM3407A
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The BLM3407A uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
GENERAL FEATURES
VDS = -30V,ID = -4.3A
RDS(ON) < 90m@ VGS=-4.5V
RDS(ON) <60m@ VGS=-10V
D
G
S
Schematic diagram
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Marking and pin Assignment
Application
PWM applications
Load switch
Power management
SOT-23 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
3407A
BLM3407A
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30
±20
-4.3
-20
1.5
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250µA
Zero Gate Voltage Drain Current
IDSS VDS=-24V,VGS=0V
Page1
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84 /W
Min Typ Max Unit
-30 -33
--
-
-1
V
µA
V2.0

1 page

BLM3407A pdf
Pb Free Product
BLM3407A
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Page5
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V2.0

5 Page



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