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PDF LBAS16LT1 Data sheet ( Hoja de datos )
| Número de pieza | LBAS16LT1 | |
| Descripción | Switching Diode | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LBAS16LT1 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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LESHAN RADIO COMPANY, LTD.
Switching Diode
ƽ Pb-Free Package is available.
LBAS16LT1
DEVICE MARKING AND ORDERING INFORMATION
Device
LBAS16LT1
LBAS16LT1G
Marking
A6
A6
(Pb-Free)
Package
SOT-23
SOT-23
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
VR
IF
I FM(surge)
THERMAL CHARACTERISTICS
Shipping
3000/Tape&Reel
3000/Tape&Reel
Value
75
200
500
Unit
Vdc
mAdc
mAdc
3
1
2
SOT–23
3
CATHODE
1
ANODE
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V R = 75Vdc)
(V R = 75 Vdc, T J = 150°C)
(V R = 25 Vdc, T J = 150°C)
Reverse Breakdown Voltage
(I BR = 100 µAdc)
Forward Voltage
(I F = 1.0 mAdc)
(I F = 10 mAdc)
(I F = 50 mAdc)
(I F = 150 mAdc)
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Forward Recovery Voltage
(I F = 10 mAdc, t r = 20ns )
Reverse Recovery Time
(I F = I R = 10 mAdc, R L = 50 Ω)
Stored Charge
(I F = 10 mAdc to V R= 5.0Vdc, R L = 500 Ω)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
IR
V (BR)
VF
CD
V FR
t rr
QS
Min
—
—
—
75
—
—
—
—
—
–-
—
—
Max
1.0
50
30
—
715
855
1000
1250
2.0
1.75
6.0
45
Unit
µAdc
Vdc
mV
pF
Vdc
ns
pC
LBAS16LT1-1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LBAS16LT1.PDF ] | |
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