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PDF LBAS16HT1 Data sheet ( Hoja de datos )
| Número de pieza | LBAS16HT1 | |
| Descripción | Switching Diode | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Switching Diode
FEATURE
ƽSmall plastic SMD package.
ƽContinuous reverse voltage: max. 75 V.
ƽHigh-speed switching in hybrid thick and thin-film circuits.
ƽPb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
LBAS16HT1
LBAS16HT1G
Marking
A6
A6
(Pb-Free)
Shipping
3000/Tape&Reel
3000/Tape&Reel
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
VR
IF
I FM(surge)
Value
75
200
500
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Total Device Dissipation FR-5 Board,*
TA = 25°C
Derate above 25°C
P D 200
1.57
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
**FR-4 Minimum Pad
R θJA
T J , T stg
635
150
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V R = 75 Vdc)
(V R = 75 Vdc, T J = 150°C)
(V R = 25 Vdc, T J = 150°C)
Reverse Breakdown Voltage
(I BR = 100 µAdc)
IR
V (BR)
Forward Voltage
(I F = 1.0 mAdc)
(I F = 10 mAdc)
(I F = 50 mAdc)
(I F = 150 mAdc)
Diode Capacitance
(V R = 0, f = 1.0 MHz)
VF
CD
Forward Recovery Voltage
(I F = 10 mAdc, t r = 20 ns)
Reverse Recovery Time
(I F = I R = 10 mAdc, R L = 50 Ω)
Stored Charge
(I F = 10 mAdc to V R = 5.0 Vdc, R L = 500 Ω)
V FR
t rr
QS
LBAS16HT1
1
2
SOD -323
Unit
Vdc
mAdc
mAdc
1
CATHODE
Unit
mW
mW/°C
°C/W
°C
Min
—
—
—
75
—
—
—
—
—
—
—
—
Max Unit
µAdc
1.0
50
30
— Vdc
715
855
1000
1250
2.0
1.75
6.0
mV
pF
Vdc
ns
45 pC
2
ANODE
LBAS16HT1–1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LBAS16HT1.PDF ] | |
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