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PDF LBAT54SLT1G Data sheet ( Hoja de datos )

Número de pieza LBAT54SLT1G
Descripción Dual Series Schottky Barrier Diodes
Fabricantes Leshan Radio Company 
Logotipo Leshan Radio Company Logotipo



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LESHAN RADIO COMPANY, LTD.
Dual Series Schottky
Barrier Diodes
LBAT54SLT1G
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
Extremely Fast Switching Speed
Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc
We declare that the material of product
compliance with RoHS requirements.
ORDERING INFORMATION
Device
Marking
LBAT54SLT1G
LD3
Shipping
3000/Tape&Reel
LBAT54SLT3G
LD3 10000/Tape&Reel
3
1
2
SOT-23 (TO-236AB)
ANODE
1
CATHODE
2
3
CATHODE/ANODE
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Reverse Voltage
VR
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PD
Forward Current (DC)
IF
Junction Temperature
Storage Temperature Range
TJ
Tstg
Value
30
225
1.8
200 Max
125 Max
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Reverse Breakdown Voltage (IR = 10 µA)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 25 V)
V(BR)R
CT
IR
30
Forward Voltage (IF = 0.1 mAdc)
Forward Voltage (IF = 30 mAdc)
VF —
VF —
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
VF —
trr —
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
VF —
VF —
Forward Current (DC)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
IF
IFRM
IFSM
Typ
0.5
0.22
0.41
0.52
0.29
0.35
Unit
Volts
mW
mW/°C
mA
°C
°C
Max
Unit
— Volts
10 pF
2.0 µAdc
0.24
Vdc
0.5 Vdc
1.0 Vdc
5.0 ns
0.32
0.40
200
300
600
Vdc
Vdc
mAdc
mAdc
mAdc
Rev.A 1/3

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