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PDF 2N4416 Data sheet ( Hoja de datos )
| Número de pieza | 2N4416 | |
| Descripción | SILICON N-CHANNEL JFETS | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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2N4416
2N4416A
SILICON
N-CHANNEL JFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4416 and 2N4416A
are silicon N-Channel Junction Field Effect Transistors
designed for VHF amplifier and mixer applications.
MARKING: FULL PART NUMBER
TO-72 CASE
MAXIMUM RATINGS: (TA=25°C)
Gate-Drain Voltage
Gate-Source Voltage
Drain-Source Voltage
Gate Current
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VGD
VGS
VDS
IG
PD
TJ, Tstg
2N4416
30
2N4416A
35
30 35
30 35
10
300
-65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N4416
SYMBOL TEST CONDITIONS
MIN MAX
IGSS
VGS=20V, VDS=0
- 100
IGSS
VGS=20V, VDS=0, TA=150°C
- 100
IDSS
VDS=15V, VGS=0
5.0 15
BVGSS
IG=1.0μA
30 -
VGS(off)
VDS=15V, ID=1.0nA
- 6.0
gFS VDS=15V, VGS=0, f=1.0kHz
4,500 7,500
gOS
VDS=15V, VGS=0, f=1.0kHz
- 50
Crss
VDS=15V, VGS=0, f=1.0MHz
- 1.0
Ciss VDS=15V, VGS=0, f=1.0MHz
- 4.0
Coss
VDS=15V, VGS=0, f=1.0MHz
- 2.0
2N4416A
MIN MAX
- 100
- 100
5.0 15
35 -
2.5 6.0
4,500 7,500
- 50
- 1.0
- 4.0
- 2.0
UNITS
V
V
V
mA
mW
°C
UNITS
pA
nA
mA
V
V
μS
μS
pF
pF
pF
HIGH FREQUENCY CHARACTERISTICS:
SYMBOL TEST CONDITIONS
giss
biss
goss
boss
gfs
Gps
NF
VDS=15V, VGS=0
VDS=15V, VGS=0
VDS=15V, VGS=0
VDS=15V, VGS=0
VDS=15V, VGS=0
VDS=15V, ID=5.0mA
VDS=15V, ID=5.0mA, RG=1.0kΩ
100MHz
MIN MAX
- 100
- 2,500
- 75
- 1,000
--
18 -
- 2.0
400MHz
MIN MAX
- 1,000
- 10,000
- 100
- 4,000
4,000 -
10 -
- 4.0
UNITS
μS
μS
μS
μS
μS
dB
dB
R2 (4-June 2013)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N4416.PDF ] | |
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