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PDF IRF7807PbF Data sheet ( Hoja de datos )

Número de pieza IRF7807PbF
Descripción HEXFET Chip-Set for DC-DC Converters
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD – 95290
IRF7807PbF
IRF7807APbF
HEXFET® Chip-Set for DC-DC Converters
• N Channel Application Specific MOSFETs
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Lead-Free
Description
These new devices employ advanced HEXFET
Power MOSFET technology to achieve an
unprecedented balance of on-resistance and gate
charge. The reduced conduction and switching losses
make them ideal for high efficiency DC-DC
Converters that power the latest generation of mobile
microprocessors.
A pair of IRF7807 devices provides the best cost/
performance solution for system voltages, such as 3.3V
and 5V.
SO-8
S1
S2
S3
G4
A
8D
7D
6D
5D
Top View
Device Features
IRF7807 IRF7807A
Vds 30V 30V
Rds(on) 25m25m
Qg 17nC 17nC
Qsw
5.2nC
Qoss 16.8nC 16.8nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
25°C
Current (VGS 4.5V)
Pulsed Drain Current
70°C
Power Dissipation
25°C
70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed source Current
Symbol
VDS
VGS
I
D
IDM
PD
TJ, TSTG
I
S
ISM
IRF7807
IRF7807A
30
±12
8.3 8.3
6.6 6.6
66 66
2.5
1.6
–55 to 150
2.5 2.5
66 66
Units
V
A
W
°C
A
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
RθJA
Max.
50
Units
°C/W
www.irf.com
1
09/22/04

1 page




IRF7807PbF pdf
IRF7807
Typical Characteristics
IRF7807/APbF
IRF7807A
Figure 5. Normalized On-Resistance vs. Temperature
Figure 6. Normalized On-Resistance vs. Temperature
Figure 7. Typical Gate Charge vs. Gate-to-Source Voltage
Figure 8. Typical Gate Charge vs. Gate-to-Source Voltage
Figure 9. Typical Rds(on) vs. Gate-to-Source Voltage
www.irf.com
Figure 10. Typical Rds(on) vs. Gate-to-Source Voltage
5

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