PDF PBSS3540MB Data sheet ( Hoja de datos )

Número de pieza	PBSS3540MB
Descripción	0.5A PNP low VCEsat (BISS) transistor
Fabricantes	NXP Semiconductors
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No Preview Available ! PBSS3540MB 40 V, 0.5 A PNP low VCEsat (BISS) transistor Rev. 1 — 7 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2540MB. 1.2 Features and benefits  Leadless ultra small SMD plastic package  Low package height of 0.37 mm  Low collector-emitter saturation voltage VCEsat  High collector current capability IC and ICM 1.3 Applications  DC-to-DC conversion  Supply line switching  Battery charger  High efficiency due to less heat generation  AEC-Q101 qualified  Reduced Printed-Circuit Board (PCB) requirements  LCD backlighting  Driver in low supply voltage applications (e.g. lamps and LEDs) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance Conditions open base single pulse; tp ≤ 1 ms IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Min Typ Max Unit - - -40 V - - -500 mA - - -1 A - 440 700 mΩ 1 page NXP Semiconductors PBSS3540MB 40 V, 0.5 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Symbol ICBO IEBO hFE VCEsat RCEsat VBEsat VBEon fT Cc Characteristics Parameter Conditions collector-base cut-off current emitter-base cut-off current VCB = -30 V; IE = 0 A; Tamb = 25 °C VCB = -30 V; IE = 0 A; Tj = 150 °C VEB = -5 V; IC = 0 A; Tamb = 25 °C DC current gain VCE = -2 V; IC = -10 mA; Tamb = 25 °C VCE = -2 V; IC = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VCE = -2 V; IC = -500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C collector-emitter saturation voltage IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C IC = -100 mA; IB = -5 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = -200 mA; IB = -10 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C collector-emitter IC = -500 mA; IB = -50 mA; pulsed; saturation resistance tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C base-emitter saturation IC = -500 mA; IB = -50 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C base-emitter turn-on voltage VCE = -2 V; IC = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C transition frequency VCE = -5 V; IC = -100 mA; f = 100 MHz; Tamb = 25 °C collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C Min Typ Max Unit - - -100 nA - - -50 µA - - -100 nA 200 - 150 - - - 40 - - - - -50 mV - - -130 mV - - -200 mV - - -350 mV - 440 700 mΩ - - -1.2 V - - -1.1 V 100 300 - MHz - - 10 pF PBSS3540MB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 7 March 2012 © NXP B.V. 2012. All rights reserved. 5 of 12 5 Page NXP Semiconductors PBSS3540MB 40 V, 0.5 A PNP low VCEsat (BISS) transistor Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G reenChip,HiPerSmart,HITAG,I²C-bus logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. 13. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:[email protected] PBSS3540MB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 7 March 2012 © NXP B.V. 2012. All rights reserved. 11 of 12 11 Page

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