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PDF K3115B Data sheet ( Hoja de datos )
| Número de pieza | K3115B | |
| Descripción | N-CHANNEL POWER MOS FET | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3115B
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3115B is N-Channel MOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3115B-S17-AY Note
Isolated TO-220
Note Pb-free (This product does not contain Pb in
External electrode.)
FEATURES
• Low gate charge
QG = 21 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
• Gate voltage rating : ±30 V
• Low on-state resistance
RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)
• Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
600
±30
±6.0
±24
2.0
35
150
−55 to +150
6.0
24
V
V
A
A
W
W
°C
°C
A
mJ
(Isolated TO-220)
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18065EJ2V0DS00 (2nd edition)
Date Published August 2006 NS CP (K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006
1 page  
2SK3115B
<R>
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
3
ID = 6.0 A
2
3.0 A
1
0
-50
VGS = 10 V
Pulsed
0 50 100
Tch - Channel Temperature - °C
150
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1000
100
C iss
C oss
C rss
10
VGS = 0 V
f = 1 MHz
1
0.01
0.1
1
10 100
VDS - Drain to Source Voltage – V
1000
REVWESE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/μs
VGS = 0 V
100
10
0.1
1
ID - Drain Current - A
10
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
VGS = 10 V
1
0V
0.1
0.01
0
Pulsed
0.5 1 1.5
VF(S-D) – Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
1000
100
td(off)
tf
td(on)
10
tr
VDD = 150 V
VGS = 10 V
RG = 10 Ω
1
0.1
1
ID - Drain Current - A
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
700
VDD = 450 V
600 300 V
150 V
500
400
300
200
100
0
05
VDS
10 15
1
9
VGS
8
7
6
5
4
3
2
ID = 6.0 A 1
0
20 25
QG – Gate Chage - nC
Data Sheet D18065EJ2V0DS
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K3115B.PDF ] | |
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