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Número de pieza | K881 | |
Descripción | MOSFET ( Transistor ) - 2SK881 | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de K881 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK881
FM Tuner Applications
VHF Band Amplifier Applications
2SK881
Unit: mm
• Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
• High forward transfer admittance: |Yfs| = 9 mS (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDO
IG
PD
Tj
Tstg
−18
10
100
125
−55~125
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1C
Weight: 0.006 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
IGSS
VGS = −0.5 V, VDS = 0
V (BR) GDO IG = −10 μA
IDSS
(Note)
VGS = 0, VDS = 10 V
VGS (OFF)
⎪Yfs⎪
VDS = 10 V, ID = 1 μA
VGS = 0, VDS = 10 V, f = 1 kHz
Ciss VDS = 10 V, VGS = 0, f = 1 MHz
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
Gps VDD = 10 V, f = 100 MHz (Figure 1)
NF VDD = 10 V, f = 100 MHz (Figure 1)
Note: IDSS classification O: 1.0~3.0, Y: 2.5~6.0, GR: 5.0~10.0
Min Typ. Max Unit
⎯ ⎯ −10 nA
−18 ⎯
⎯
V
1.0 ⎯ 10 mA
−0.4 ⎯ −4.0 V
⎯ 9 ⎯ mS
⎯ 6.0 ⎯ pF
⎯ ⎯ 0.15 pF
10 18 ⎯ dB
⎯ 2.5 3.5 dB
1 2007-11-01
1 page 2SK881
5 2007-11-01
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet K881.PDF ] |
Número de pieza | Descripción | Fabricantes |
K880 | MOSFET ( Transistor ) - 2SK880 | Toshiba |
K881 | MOSFET ( Transistor ) - 2SK881 | Toshiba |
K882 | MOSFET ( Transistor ) - 2SK882 | Toshiba |
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