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PDF DPG30C200HB Data sheet ( Hoja de datos )

Número de pieza DPG30C200HB
Descripción High Performance Fast Recovery Diode
Fabricantes IXYS 
Logotipo IXYS Logotipo



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No Preview Available ! DPG30C200HB Hoja de datos, Descripción, Manual

HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG30C200HB
1 23
DPG30C200HB
VRRM
I FAV
t rr
= 200 V
= 2x 15 A
= 35 ns
Backside: cathode
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Package: TO-247
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a

1 page




DPG30C200HB pdf
DPG30C200HB
Fast Diode
80
60
IF
40
[A]
TVJ = 25°C
150°C
0.5
TVJ = 125°C
VR = 130 V
0.4
Qrr
0.3
[μC]
0.2
30 A
15 A
7.5 A
16
14
12
IRM 10
8
[A]
6
IF = 30 A
IF = 15 A
IF = 7.5 A
20
0
0.0 0.5 1.0 1.5 2.0
VF [V]
Fig. 1 Forward current
IF versus VF
2.5
0.1
0.0
0 100 200 300 400 500 600
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
4
2
TVJ = 125°C
VR = 130 V
0
0 100 200 300 400 500 600
-diF/dt [A/μs]
Fig. 3 Typ. peak reverse current
IRM versus -diF /dt
1.4
1.2
1.0
0.8
Kf
0.6
0.4
0.2
IRM
Qrr
70
60
trr 50
[ns] 40
30
TVJ = 125°C
VR = 130 V
IF = 30 A
15 A
7.5 A
16
14
12
VFR 10
8
[V]
6
4
VFR
2
T = 125°C
VJ
IF = 15 A
VR = 130 V
400
300
20t0fr
[ns]
100
tfr
0.0
0 20 40 60 80 100 120 140 160
TVJ [°C]
Fig. 4 Typ. dynamic parameters
Qrr, IRM versus TVJ
20
0 100 200 300 400 500 600
-diF /dt [A/μs]
Fig. 5 Typ. recovery time
trr versus -diF /dt
00
0 100 200 300 400 500 600
-diF /dt [A/μs]
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF /dt
16 1.8
14
12
Erec 10
8
[μJ]
6
I = 30 A
F
IF = 15 A
IF = 7.5 A
1.6
1.4
ZthJC
1.2
[K/W]
1.0
4
2
TVJ = 125°C
VR = 130 V
0
0 100 200 300 400 500 600
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
0.8
0.6
1 10 100 1000
t [ms]
Fig. 8 Transient thermal resistance junction to case
10000
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a

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