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PDF FSW25N50A Data sheet ( Hoja de datos )

Número de pieza FSW25N50A
Descripción N-Channel MOSFET
Fabricantes InPower Semiconductor 
Logotipo InPower Semiconductor Logotipo



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No Preview Available ! FSW25N50A Hoja de datos, Descripción, Manual

N-Channel MOSFET
Applications:
• Uninterruptible Power Supply(UPS)
• LCD Panel Power
• SMPS Power
• DC-AC Inverter
FSW25N50
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• ESD Capability Improved
Ordering Information
PART NUMBER
FSW25N50A
PACKAGE
TO-3PN
FSW25N50A
Pb Lead Free Package and Finish
VDSS
500V
RDS(ON) (Typ.)
0.18 :
ID
25A
BRAND
FSW25N50A
G DS
TO-3PN
Not to Scale
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
FSW25N50A
Units
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
500
25
Figure 3
Figure 6
230
1.84
V
A
W
W/ oC
VGS Gate-to-Source Voltage
EAS
Single Pulse Avalanche Engergy
L=10mH
± 30
2500
V
mJ
IAS
dv/dt
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
Figure 8
5.0
V/ ns
VESD(G-S) Gate to Source ESD:HBM_C=100pF,R=1.5K:
6000
V
TL
TPKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
300
260
TJ and TSTG Operating Junction and Storage Temperature Range
-55 to 150
*Drain Current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
oC
Thermal Resistance
Symbol
RTJC
RTJA
Parameter
Junction-to-Case
Junction-to-Ambient
FSW25N50A
0.54
62
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for
a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
©2011 InPower Semiconductor Co., Ltd.
Page 1 of 9
FSW25N50A REV. A Jan. 2011

1 page




FSW25N50A pdf
1000
100
Figure 6. Maximum Peak Current Capability
TRANSCONDUCTANCE
MAY LIMIT CURRENT IN
THIS REGION
FOR TEMPERATURES
ABOVE 25 oC DERATE PEAK
CURRENT AS FOLLOWS:
, = ,
----------------7---&-

10
VGS = 10V
1
1E-6
10E-6
100E-6
1E-3
10E-3
tp, Pulse Width (s)
100E-3
1E+0
10E+0
Figure 7. Typical Transfer Characteristics
45 PULSE DURATION = 250 μs
DUTY CYCLE = 0.5% MAX
37.5 VDS = 10 V
30
22.5
15
7.5
0
2.5
+150 oC
+25 oC
-55 oC
3.0 3.5 4.0 4.5 5.0 5.5 6.0
VGS, Gate-to-Source Voltage (V)
6.5
Figure8. Unclamped Inductive
Switching Capability
1000
100.
10.0
STARTING TJ = 150 oC
STARTING TJ = 25 oC
If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
If Rz 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]
R equals total Series resistance of Drain circuit
1.00
1E-6
10E-6 100E-6 1E-3
10E-3
tAV, Time in Avalanche (s)
100E-3
Figure 9. Typical Drain-to-Source ON
Resistance vs Drain Current
0.75
0.60
PULSE DURATION = 2 μs
DUTY CYCLE = 0.5% MAX
TC=25°C
0.45
VGS = 10V
0.30
VGS = 20V
0.15
0
0
5 10 15 20 25 30
ID, Drain Current (A)
Figure 10. Typical Drain-to-Source ON Resistance
vs Junction Temperature
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6 PULSE DURATION = 250 μs
0.4
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 10.0A
0.2
-75 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (oC)
©2011 InPower Semiconductor Co., Ltd.
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