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Número de pieza | RB501SM-30 | |
Descripción | Schottky Barrier Diode | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RB501SM-30 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Schottky Barrier Diode
RB501SM-30
Data Sheet
lApplication
General rectification
lDimensions (Unit : mm)
0.8±0.05
0.12±0.05
(1)
lLand Size Figure (Unit : mm)
0.8
lFeatures
1) Ultra small mold type
(EMD2)
2) High reliability
3) Super low VF
lConstruction
Silicon epitaxial planar type
(2)
0.3±0.05
0.6±0.1
ROHM : EMD2
JEDEC : SOD-523
JEITA : SC-79
: Year, week and factory
lTaping Dimensions (Unit : mm)
4.0±0.1
2.0±0.05
φ 1.5±0.05
f1.50.05
EMD2
lStructure (1) Cathode
(2) Anode
0.2±0.05
0.95±0.06
0
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
E空mポpケtyッpトocket 4.0±0.1
Conditions
2.0±0.05
fφ0.05.5
0.2
0.76±0.05
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
30 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle
Operating junction temperature
Tj
-
30
100
1000
125
V
mA
mA
°C
Storage temperature
Tstg
- -55 to +125 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF IF=10mA - - 0.35 V
Reverse current
IR
VR=10V
- - 10 mA
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.01 - Rev.A
1 page RB501SM-30
lElectrical Characteristic Curves
Data Sheet
1000
Rth(j-a)
100
Rth(j-c)
Glass epoxy board mounted
IM=100mA
IF=0.2A
time
10
0.001 0.01 0.1
1ms300ms
1 10 100 1000
TIME : t(s)
Rth-t CHARACTERISTICS
300
250
200
150
IO
0A
0V
VR t
T
DC
D = 1/2
D=t/T
VR=VRM/2
Tj=125°C
100
50 Sin(θ=180)
0
0 25 50 75 100 125
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
300
250
200
150
DC
D = 1/2
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=125°C
100
50 Sin(θ=180)
0
0 25 50 75 100 125
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
30
25
20
15
AVE. : 9.5kV
10
AVE. : 2.8kV
5
0
C=200pF
R=0W
C=100pF
R=1.5kW
ESD DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2015.01 - Rev.A
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet RB501SM-30.PDF ] |
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