DataSheet.es    


PDF RB238T100 Data sheet ( Hoja de datos )

Número de pieza RB238T100
Descripción Schottky Barrier Diode
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de RB238T100 (archivo pdf) en la parte inferior de esta página.


Total 6 Páginas

No Preview Available ! RB238T100 Hoja de datos, Descripción, Manual

Schottky Barrier Diode
RB238T100
Data Sheet
lApplication
Switching power supply
lFeatures
1) Cathode common type
2) High reliability
3) Super low IR
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
4.5±00..31
10.0±
0.3
0.1
f3.2±0.2
2.8±00..21
lStructure
1
1.2
1.3
0.8
2.45±0.5 2.45±0.5
(1) (2) (3)
2.6±0.5
0.75±00..015
ROHM : TO220FN
1 : Manufacture Date
(1) (2) (3)
Anode Cathode Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
110 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load,Tc=85ºC Max., IO/2 per diode
60Hz half sin wave, Non-repetitive at
Ta=25ºC, 1cycle, per diode
Operating junction temperature
Tj
-
100
40
100
150
V
A
A
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical and Thermal Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Forward voltage
VF IF=20A
Reverse current
IR VR=100V
Thermal resistance
Rth(j-c)
Junction to case
Min. Typ. Max. Unit
- - 0.86 V
- - 20 mA
- - 2 °C / W
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.01 - Rev.A

1 page




RB238T100 pdf
RB238T100
lElectrical Characteristic Curves
Data Sheet
10
Rth(j-a)
Rth(j-c)
1
Glass epoxy board mounted
IM=100mA
IF=20A
time
0.1
0.001 0.01 0.1
1ms300ms
1 10
100 1000
TIME : t(s)
Rth-t CHARACTERISTICS
100
80
60
40
IO
0A
0V
VR t
T
DC
D = 1/2
D=t/T
VR=VRM/2
Tj=150°C
20
Sin(θ=180)
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
100
80
DC
60
D = 1/2
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
40
Sin(θ=180)
20
0
0 25 50 75 100 125 150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
30
No destruction at 30kV
25
AVE. : 20.5kV
20
15
10
5
0 C=200pF C=100pF
R=0W
R=1.5kW
ESD DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2015.01 - Rev.A

5 Page










PáginasTotal 6 Páginas
PDF Descargar[ Datasheet RB238T100.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
RB238T100Schottky Barrier DiodeROHM Semiconductor
ROHM Semiconductor
RB238T100FHSchottky Barrier DiodeROHM Semiconductor
ROHM Semiconductor
RB238T100NZSchottky Barrier DiodeROHM Semiconductor
ROHM Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar