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Número de pieza | FW313 | |
Descripción | Ultrahigh-Speed Switching Applications | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FW313 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Ordering number:ENN6389
N-Channel and P-Channel Silicon MOSFETs
FW313
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Composite type with a N-channel MOSFET and a P-
channel MOSFET driving from a 4V supply voltage
contained in a single package.
· High-density mounting.
Package Dimensions
unit:mm
2129
[FW313]
85
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
1
5.0
4
0.595 1.27 0.43
1 : Source1
2 : Gate1
0.2 3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (1000mm2×0.8mm) 1unit
Mounted on a ceramic board (1000mm2×0.8mm)
Ratings
N-channel P-channel
30 –30
±20 ±20
7 –5
28 –20
1.7
2.0
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=7A
ID=7A, VGS=10V
ID=4A, VGS=4V
Ratings
min typ max
Unit
30 V
10 µA
±10 µA
1.0 2.4 V
9 13
S
25 32 mΩ
37 50 mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-2373 No.6389-1/6
1 page FW313
1000
7
5
3
2
tf
100 td(off)
7
5
3
2
SW Time -- ID
td(on)
[Pch]
VDD=--15V
VGS=--10V
tr
10000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
Ciss, Coss, Crss -- VDS [Pch]
f=1MHz
Ciss
Coss
Crss
10
--0.1
23
--10
VDS=--10V
--9 ID=--5A
5 7 --1.0
2
Drain Current, ID – A
VGS -- Qg
3
--8
5 7 --10
IT00916
[Pch]
--7
--6
--5
--4
--3
--2
--1
0
0 5 10 15 20 25
Total Gate Charge, Qg – nC
IT00918
PD(FET 1) -- PD(FET 2) [Nch, Pch]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Mounted on a ceramic board (1000mm 2×0.8mm) 1 unit
10
0 --5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS – V IT00917
--100
7
5
ASO
[Pch]
3 IDP=--20A
2
--10
7
ID=--5A
5
3
2
--1.0
7
5 Operation in this
10m1sms
100ms
DC operation
3
2
area is limited by RDS(on).
100µs
--0.1
7
5
Ta=25°C
3 Single pulse
2
--0.01
1 unit
Mounted
on
a
ceramic
board
(1000mm2×0.8mm)
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3
Drain-to-Source Voltage, VDS – V
5 7 --100
IT00919
PD -- Ta
[Nch, Pch]
2.5
2.0
1.7
1.5
1.0
T1outanlitDissipation
0.5
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Allowable Power Dissipation (FET2), PD – W IT00921
0 Mounted on a ceramic board (1200mm2×0.8mm)
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C
IT00920
No.6389-5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet FW313.PDF ] |
Número de pieza | Descripción | Fabricantes |
FW313 | Ultrahigh-Speed Switching Applications | Sanyo Semicon Device |
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