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PDF IRFP4127PbF Data sheet ( Hoja de datos )
| Número de pieza | IRFP4127PbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Application
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
G
D
S
IRFP4127PbF
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max
ID
200V
17m
21m
75A
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
Gate
S
D
G
TO-247AC
D
Drain
S
Source
Base part number Package Type
IRFP4127PbF
TO-247AC
Standard Pack
Form
Quantity
Tube
25
Orderable Part Number
IRFP4127PbF
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
Thermal Resistance
Parameter
RJC Junction-to-Case
RCS
Case-to-Sink, Flat Greased Surface
RJA Junction-to-Ambient
Max.
75
53
300
341
2.3
± 20
57
-55 to + 175
300
10 lbf·in (1.1 N·m)
Units
A
W
W/°C
V
V/ns
°C
244
Typ.
–––
0.24
–––
Max.
0.4
–––
40
mJ
Units
°C/W
1 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 09, 2015
1 page  
1
IRFP4127PbF
D = 0.50
0.1 0.20
0.10
0.05
0.01 0.02
0.01
0.001
1E-006
J J
1 1
R1R1
SINGLE PULSE
( THERMAL RESPONSE )
Ci= iRi
Ci= iRi
R2R2
2 2
Ri (°C/W) I (sec)
R3R3 R4R4
0.02 0.000019
CC 0.08333 0.000078
33 44
0.181667 0.001716
0.11333 0.008764
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart = 25°C (Single Pulse)
10
1 Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
Fig 14. Typical Avalanche Current vs. Pulse Width
250
TOP
Single Pulse
BOTTOM 1% Duty Cycle
200 ID = 44A
150
100
50
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
175
Fig 15. Maximum Avalanche Energy vs. Temperature
5 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
1.0E-02
March 09, 2015
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFP4127PbF.PDF ] | |
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