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PDF FP35R12W2T4 Data sheet ( Hoja de datos )

Número de pieza FP35R12W2T4
Descripción IGBT Module
Fabricantes Infineon 
Logotipo Infineon Logotipo



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No Preview Available ! FP35R12W2T4 Hoja de datos, Descripción, Manual

Technische Information / technical information
IGBT-Module
IGBT-modules
FP35R12W2T4
EasyPIM™ Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC
EasyPIM™ module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
Vorläufige Daten / preliminary data
V†Š» = 1200V
I† ÒÓÑ = 35A / I†ç¢ = 70A
Typische Anwendungen
Hilfsumrichter
Klimaanlagen
Motorantriebe
Elektrische Eigenschaften
Niedrige Schaltverluste
Trench IGBT 4
V†ŠÙÈÚ mit positivem Temperaturkoeffizienten
niedriges V†ŠÙÈÚ
Mechanische Eigenschaften
AlèOé Substrat für kleinen thermischen
Widerstand
Kompaktes Design
Lötverbindungs Technologie
Robuste Montage durch integrierte
Befestigungsklammern
Typical Applications
Auxiliary Inverters
Airconditions
Motor Drives
Electrical Features
Low Switching Losses
Trench IGBT 4
V†ŠÙÈÚ with positive Temperature Coefficient
Low V†ŠÙÈÚ
Mechanical Features
AlèOé Substrate for Low Thermal Resistance
Compact Design
Solder Contact Technology
Rugged mounting due to integrated mounting
clamps
Module Label Code
Barcode Code 128
DMX - Code
prepared by: DK
approved by: MB
Content of the Code
Module Serial Number
Module Material Number
Production Order Number
Datecode (Production Year)
Datecode (Production Week)
date of publication: 2009-10-19
revision: 2.2
material no: 29155
UL approved (E83335)
1
Digit
1- 5
6 - 11
12 - 19
20 - 21
22 - 23

1 page




FP35R12W2T4 pdf
Technische Information / technical information
IGBT-Module
IGBT-modules
FP35R12W2T4
Diode-Brems-Chopper / Diode-brake-chopper
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tÔ = 1 ms
Grenzlastintegral
I²t - value
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C
Vç = 0 V, t« = 10 ms, TÝÎ = 150°C
Charakteristische Werte / characteristic values
Durchlassspannung
forward voltage
IŒ = 10 A, V•Š = 0 V
IŒ = 10 A, V•Š = 0 V
IŒ = 10 A, V•Š = 0 V
Rückstromspitze
peak reverse recovery current
IŒ = 10 A, - diŒ/dt = 500 A/µs (TÝÎ=150°C)
Vç = 600 V
V•Š = -15 V
Sperrverzögerungsladung
recovered charge
IŒ = 10 A, - diŒ/dt = 500 A/µs (TÝÎ=150°C)
Vç = 600 V
V•Š = -15 V
Abschaltenergie pro Puls
reverse recovery energy
IŒ = 10 A, - diŒ/dt = 500 A/µs (TÝÎ=150°C)
Vç = 600 V
V•Š = -15 V
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode / per diode
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
ð«ÈÙÚþ = 1 W/(m·K) /ðÃØþÈÙþ = 1 W/(m·K)
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Vorläufige Daten
preliminary data
Vçç¢
1200
V
IΠ10 A
IŒç¢ 20 A
I²t
16,0
14,0
A²s
A²s
min. typ. max.
1,75 2,25 V
VΠ1,75 V
1,75 V
12,0 A
Iç¢ 10,0 A
8,00 A
0,90 µC
QØ 1,70 µC
1,90 µC
0,24 mJ
EØþÊ 0,52 mJ
0,59 mJ
RÚÌœ†
1,75 1,95 K/W
RÚ̆™
1,30
K/W
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
Nennwiderstand
rated resistance
T† = 25°C
Abweichung von Ræåå
deviation of Ræåå
T† = 100°C, Ræåå = 493 Â
Verlustleistung
power dissipation
T† = 25°C
B-Wert
B-value
Rè = Rèë exp [Bèëõëå(1/Tè - 1/(298,15 K))]
B-Wert
B-value
Rè = Rèë exp [Bèëõîå(1/Tè - 1/(298,15 K))]
B-Wert
B-value
Rè = Rèë exp [Bèëõæåå(1/Tè - 1/(298,15 K))]
Angaben gemäß gültiger Application Note.
Specification according to the valid application note.
min. typ. max.
Rèë 5,00 kÂ
ÆR/R -5
5%
Pèë 20,0 mW
Bèëõëå
3375
K
Bèëõîå
3411
K
Bèëõæåå
3433
K
prepared by: DK
approved by: MB
date of publication: 2009-10-19
revision: 2.2
5

5 Page





FP35R12W2T4 arduino
Technische Information / technical information
IGBT-Module
IGBT-modules
FP35R12W2T4
Schaltplan / circuit diagram
Vorläufige Daten
preliminary data
ϑ
Gehäuseabmessungen / package outlines
Infineon
prepared by: DK
approved by: MB
date of publication: 2009-10-19
revision: 2.2
11

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