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PDF KTC2875 Data sheet ( Hoja de datos )
| Número de pieza | KTC2875 | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
FOR MUTING AND SWITCHING APPLICATION.
FEATURES
High Emitter-Base Voltage : VEBO=25V(Min.)
High Reverse hFE
: Reverse hFE=150(Typ.) (VCE=-2V, IC=-2mA)
Low on Resistance : RON=1 (Typ.), (IB=5mA)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
RATING
50
20
25
300
60
150
150
-55 150
UNIT
V
V
V
mA
mA
mW
KTC2875
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
23
1
PP
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
hFE Rank
Type Name
M
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Cob
VCB=50V, IE=0
VEB=25V, IC=0
VCE=2V, IC=4mA
IC=30mA, IB=3mA
VCE=2V, IC=4mA
VCE=6V, IC=4mA
VCB=10V, IE=0, f=1MHz
MIN.
-
-
350
-
-
-
-
Turn-on Time
Switching
Time
Storage Time
Fall Time
Note : hFE Classification B: 350 1200
ton
tstg
tf
INPUT
10V
1µs
DUTY CYCLE <= 2%
OUTPUT
4kΩ
VCC =12V
VBB =-3V
-
-
-
TYP.
-
-
-
0.042
0.61
30
4.8
MAX.
0.1
0.1
1200
0.3
-
-
7
UNIT
A
A
V
V
MHz
pF
160 -
500 -
nS
130 -
2003. 2. 25
Revision No : 2
1/3
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