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PDF G40N120CE Data sheet ( Hoja de datos )

Número de pieza G40N120CE
Descripción TSG40N120CE
Fabricantes Taiwan Semiconductor 
Logotipo Taiwan Semiconductor Logotipo



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No Preview Available ! G40N120CE Hoja de datos, Descripción, Manual

TO-264
Pin Definition:
1. Gate
2. Collector
3. Emitter
TSG40N120CE
N-Channel IGBT with FRD.
PRODUCT SUMMARY
VCES (V)
VGES (V)
1200
±20
IC (A)
40
General Description
The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers
superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This
device is well suited for the resonant or soft switching application such as induction heating, microwave oven,
etc.
Features
Block Diagram
1200V NPT Trench Technology
High Speed Switching
Low Conduction Loss
Ordering Information
Part No.
TSG40N120CE C0
Package
TO-264
Packing
25pcs / Tube
NPT Trench IGBT
Absolute Maximum Rating (TA=25oC unless otherwise noted)
Parameter
Symbol
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Current
TC=25oC
TC=100oC
VCES
VGES
IC
Pulsed Collector Current *
Diode Forward Current (TC=100)
Diode Pulse Forward Current
Max Power Dissipation
TJ=25oC
TJ=100oC
Operating Junction Temperature
Storage Temperature Range
* Repetitive rating: Pulse width limited by max. junction temperature
ICM
IF
IFM
PD
TJ
TSTG
Limit
1200
±20
64
40
120
40
240
208
83
-55 to +150
-55 to +150
Unit
V
V
A
A
A
A
A
W
ºC
oC
1/10 Version: B12

1 page




G40N120CE pdf
TSG40N120CE
N-Channel IGBT with FRD.
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Turn on time vs. gate resistance
Turn off time vs. gate resistance
Switching loss vs. gate resistance
Turn on time vs. collector current
Turn off time vs. collector current
Switching loss vs. collector current
5/10 Version: B12

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