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Número de pieza | IPI65R190E6 | |
Descripción | Power Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPI65R190E6 (archivo pdf) en la parte inferior de esta página. Total 19 Páginas | ||
No Preview Available ! MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS E6
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Data Sheet
Rev. 2.0, 2011-05-13
Final
Industrial & Multimarket
1 page 3 Thermal characteristics
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Thermal characteristics
Table 3 Thermal characteristics non FullPAK
Parameter
Symbol
Min.
Thermal resistance, junction - case RthJC
Thermal resistance, junction -
ambient
RthJA
-
-
Soldering temperature,
wavesoldering only allowed at
leads
Tsold
-
Values
Typ.
-
-
Max.
0.83
62
- 260
Unit Note /
Test Condition
°C/W
leaded
°C 1.6 mm (0.063 in.)
from case for 10 s
Table 4 Thermal characteristics FullPAK
Parameter
Symbol
Min.
Thermal resistance, junction - case RthJC
Thermal resistance, junction -
ambient
RthJA
-
-
Soldering temperature,
wavesoldering only allowed at
leads
Tsold
-
Values
Typ.
-
-
Max.
3.7
80
- 260
Unit Note /
Test Condition
°C/W
leaded
°C 1.6 mm (0.063 in.)
from case for 10 s
Table 5 Thermal characteristics SMD
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit Note /
Test Condition
Thermal resistance, junction - case RthJC
-
-
0.83 °C/W
Thermal resistance, junction -
RthJA
-
-
62
ambient
SMD version, device
on PCB, minimal
footprint
- 35 -
SMD version, device
on PCB, 6cm2 cooling
area1)
Soldering temperature,
Tsold
-
-
260 °C reflow MSL1
wave- & reflow soldering allowed
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
Final Data Sheet
5 Rev. 2.0, 2011-05-13
5 Page Table 16
Typ. transfer characteristics
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Electrical characteristics diagrams
Typ. gate charge
ID=f(VGS); VDS=20V
Table 17
Avalanche energy
VGS=f(Qgate), ID=11 A pulsed
Drain-source breakdown voltage
EAS=f(Tj); ID=3.5 A; VDD=50 V
Final Data Sheet
VBR(DSS)=f(Tj); ID=1.0 mA
11 Rev. 2.0, 2011-05-13
11 Page |
Páginas | Total 19 Páginas | |
PDF Descargar | [ Datasheet IPI65R190E6.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPI65R190E6 | Power Transistor | Infineon Technologies |
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